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| 论文编号: |
O120090103 |
| 第一作者所在部门: |
705组 |
| 中文论文题目: |
Preparation of SiC foams by CVI-R technique with SiCl4/H2/CH4 system
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| 英文论文题目: |
Preparation of SiC foams by CVI-R technique with SiCl4/H2/CH4 system
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| 论文题目英文: |
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| 作者: |
杨 宇 郭全贵 史景利 刘 朗
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| 论文出处: |
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| 刊物名称: |
Materials Letters
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| 年: |
2009
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| 卷: |
63 |
| 期: |
2 |
| 页: |
224-226 |
| 联系作者: |
郭全贵 |
| 收录类别: |
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| 影响因子: |
1.748
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| 摘要: |
Silicon carbide foams were prepared by the chemical vapor infiltration-reaction (CVI-R) of SiCl4/H2/CH4 with carbon foam derived from mesophase pitch (MP), which had not only high bending strength but also low bulk density. The influence of the CH4/SiCl4 ratio in reaction atmosphere on the properties of as-prepared silicon carbide foams was investigated in detail. As the CH4/SiCl4 ratio was 0.25, resultant foam possessed the highest bending strength of 17.13 MPa. At the same time, correlations between properties and microstructure are also discussed.
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| 英文摘要: |
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| 外单位作者单位: |
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| 备注: |
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